• Laser BeamÀ» a-Si¿¡ Á¶»çÇÏ¿© ¹Ú¸·À» ³ìÀÓ. À̶§ °áÁ¤È­ ½Ã Seed·Î ÀÛ¿ëµÇ´Â Solid a-Si ÀÌ ¾øµµ·Ï ¹Ú¸· Àüü¸¦ ³ìÀÓ. °áÁ¤È­ ÁøÇà ½Ã Liquid a-Si ³»¿¡´Â Seed°¡ ¾ø±â ¶§¹®¿¡ Ãø¸éÀÇ ³ìÁö ¾ÊÀº a-SiÀÌ Seed ¿ªÇÒÀ» ÇÏ¿© °áÁ¤È­°¡ ÁøÇàµÊ. Seed·Î ÀÛ¿ëµÈ a-Si ¿µ¿ªÀ» Á¦°ÅÇϱâ À§Çؼ­ Sample¸¦ À̵¿½ÃÄÑ µ¿ÀÏÇÑ ¹æ¹ýÀ¸·Î °áÁ¤È­¸¦ Àç ½Ç½ÃÇÔ. Laser Beam ÆøÀ» °áÁ¤ ¼ºÀå ±æÀÌÀÇ 2¹è ÀÌÇÏ·Î ÇÏ¿© Nucleation¿¡ ÀÇÇÑ Small GrainÀÇ »ý¼ºÀ» ¾ïÁ¦ÇÏ´Â °ÍÀÌ ¸Å¿ì Áß¿äÇÔ.
 
 
  • [SLS Vs. ELA]
    Crystallization System SLS ELA
    Grain Size 2~5§­ 0.3~0.4§­
    Laser E/D Process Window ~200mJ/§² ~30mJ/§²
    TFT Ư¼º(À̵¿µµ)
    N-TFT
    P-TFT
    ¼ÒÀÚ ½Å·Ú¼º
    Leakage Current Ư¼º

    ~300§²/Vs
    ~120§²/Vs
    Good
    Good

    ~120§²/Vs
    ~80§²/Vs
    Good
    Good
    Driver Circuit
    Gate
    Data

    OK
    OK

    OK
    ºÎºÐ
    Max. Panel Size Á¦ÇÑ ¾øÀ½ Wide 30ÀÎÄ¡
    Through-put 15.8¸Å/Hour(2 Shot) 9.6¸Å/Hour(96%OL)