• Laser BeamÀ» a-Si¿¡ Á¶»çÇÏ¿© ¹Ú¸·À» ³ìÀδÙ. À̶§ a-Si ÀϺθ¦ ³ìÀÌÁö ¾Ê°í ³²°ÜµÎ¾î °áÁ¤È­ ÁøÇà ½Ã Seed·Î ÀÛ¿ëµÇ°Ô ÇÑ´Ù. Poly-Si °áÁ¤ÀÇ ¸ð¾çÀº Seed À§Ä¡ ¹× ¹Ðµµ¿¡ µû¶ó¼­ Å©°í ÀÛÀº ÇüÅ°¡ µÇ°í, Laser BeamÀ» 20~30ȸ ¹Ýº¹ Á¶»çÇϸé, ±ÕÀÏÇÑ ÇüÅÂÀÇ °áÁ¤À¸·Î ¸¸µé ¼ö ÀÖ´Ù
 
 
  • [SLS Vs. ELA]
    Crystallization System SLS ELA
    Grain Size 2~5§­ 0.3~0.4§­
    Laser E/D Process Window ~200mJ/§² ~30mJ/§²
    TFT Ư¼º(À̵¿µµ)
    N-TFT
    P-TFT
    ¼ÒÀÚ ½Å·Ú¼º
    Leakage Current Ư¼º

    ~300§²/Vs
    ~120§²/Vs
    Good
    Good

    ~120§²/Vs
    ~80§²/Vs
    Good
    Good
    Driver Circuit
    Gate
    Data

    OK
    OK

    OK
    ºÎºÐ
    Max. Panel Size Á¦ÇÑ ¾øÀ½ Wide 30ÀÎÄ¡
    Through-put 15.8¸Å/Hour(2 Shot) 9.6¸Å/Hour(96%OL)